Magnetron & Electron Beam Composite Coating Equipment
Unified sputtering and evaporation for advanced multilayer architectures
System Overview
The HN-MS-EB-005 combines magnetron sputtering and electron beam evaporation within a single integrated vacuum system for advanced multilayer coating development. The platform supports optical filter stacks, functional semiconductor films, and hybrid coating architectures that use evaporation and reactive sputtering in one process environment.
Working Principle
Magnetron sputtering and e-beam evaporation sources are mounted in a shared high-vacuum chamber, with deposition sequences managed by an integrated PLC controller. Each source technology contributes distinct capabilities: magnetron sputtering provides reactive compound deposition with excellent lateral uniformity, while electron beam evaporation delivers refractory and high-purity material deposition with precise rate control via QCM monitoring.
Core Advantages
- Combines evaporation purity with sputtering compositional control
- Single-vacuum multilayer sequences without air breaks
- Suitable for optical bandpass filters, anti-reflection stacks, and functional films
- Independent source control with synchronized recipe sequencing
- In-situ thickness and rate monitoring for both source types
- Compatible with a broad library of metallic and oxide materials
- Engineered for reproducible multilayer performance in production environments
- Wide-range substrate heating from ambient to 1200 °C with in-situ annealing
- Integrated in-situ ion cleaning and compatibility with wafers up to 8 inches
- Ion-beam-assisted deposition for enhanced film density and adhesion
Technical Specifications
| Chamber | Partitioned ultra-high-vacuum composite chamber |
|---|---|
| Standard Sources | 4 magnetron targets and one 4-crucible electron-beam gun |
| Power Supply | RF/DC sputtering, electron-beam control, and adjustable substrate bias supplies |
| Vacuum System | Independent pumping for each chamber zone |
| Monitoring | Quartz-crystal and optical dual-channel thickness monitoring |
| Workpiece Fixture | Multi-axis planetary rotation fixture |
| Temperature Control | Wide-range substrate temperature control from ambient to 1200 °C with in-situ annealing |
| Substrate Preparation | Integrated in-situ ion cleaning for substrate surface activation before deposition |
| Sample Compatibility | Wafers up to 8 inches and small research samples or coupons |
| Ion Assistance | Ion-beam-assisted deposition for enhanced film density and adhesion |
Specifications are representative. Final system parameters are defined during configuration. Contact our engineering team for detailed documentation.
